1SV215 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (CATV TUNING)

SMD Type
Silicon Epitaxial Planar Diode
1SV215
Diodes
Features
High Capacitance Ratio:C2V/C25V=10.5(Typ.)
Low Series Resistance:rs=0.6 (Typ.)
Excellent C-V Characteristics,and Small Tracking Error.
Useful for Small Size Tuner.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
30
V
VRM
35 (RL=10K )
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Param eter
Sym bol
Conditions
Reverse Voltage
VR
IR = 1 A
Reverse Current
IR
VR = 28 V
Capacitance
C2V
C25V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
Capacitance Ratio
C2V/C25V
Series Resistance
rs
VR = 5V, f = 470 MHz
Note :
Available in m atched group for capacitance to 2.5% .
C (M a x.)-C (M in .)
C (M in .)
(VR=2~25V)
0.025
M in
Typ
Max
Unit
30
V
10
nA
26
32
pF
2.5
3.2
9.5
10.5
0.6
0.8
Marking
Marking
T2