1SS388 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (HGH SPEED SWITCHING APPLICATION)

SMD Type
High Speed Switching Diode
1SS388
Diodes
High Speed SWITCHING Diodes
FEATURES
z Small pacakage
z Low forward voltage : V_{F3 = 0.54 ( typ )}
z Low reverse current : I_{R = 5uA ( typ )}
SOD-523
+
-
Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25 ℃
Parameter
Symbol
Limits
Peak reverse voltage
V_RM
45
DC reverse voltage
V_R
40
Maximum (peak) forward current
I_FM
300
Average forward current
I_O
100
Surge current (10ms)
I_FSM
1000
Power dissipation
P_D
150
Junction temperature
T_j
125
Storage temperature
T_stg
-55-125
Operating temperature range
T_opr
-40-100
Unit
V
V
mA
mA
mA
mW
℃
℃
℃
Electrical Ratings @T_A=25℃
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
V_F1
V_F2
V_F3
I_R
C_T
Min.
Typ. Max. Unit Conditions
0.28
V
I_F=1mA
0.36
V
I_F=10mA
0.54 0.60
V
5
μA
I_F=50mA
V_R=10V
18
25
pF
V_R=0,f=1MHZ