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| 1SS226 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | |||
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SMD Type
Switching Diodes
1SS226
FEATURES
z Low forward voltage : VF (3) = 0.9V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
Diodes
SOT-23
Maximum Ratings ,Single Diode @TA=25â
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
85
V
Peak Repetitive Peak reverse voltage
VRRM
Working Peak Reverse Voltage
VRWM
80
V
DC Blocking Voltage
VR
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
100
mA
Peak forward surge current @=10ms
2
IFSM
A
Power Dissipation
PD
150
mW
Junction temperature
TJ
150
â
Storage temperature
TSTG
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Marking
Marking
C3
Symbol
Test conditions
MIN
V(BR)
IR= 100uA
80
IR
VR=80V
VF
IF=100mA
CD
VR=0V , f=1MHz
t rr
IF=10mA
MAX
0.5
1.2
3
4
UNIT
V
uA
V
pF
nS
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