1SS184 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)

SMD Type
1SS184
Switching Diode
FEATURES
y Low forward voltage
y Fast reverse recovery time
Diodes
SOT-23
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage
V_RM
85
V
DC Blocking Voltage
V_R
80
V
Forward Continuous Current
I_FM
300
mA
Average Rectified Output Current
I_O
100
mA
Power Dissipation
P_D
150
mW
Junction Temperature
T_J
150
℃
Storage Temperature Range
T_STG
-55~+150
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V _(BR)
V_F1
V_F2
V_F3
I_R1
I_R2
C_T
t _rr
Min Typ Max Unit
80
V
0.60
V
0.72
V
0.9
1.2
V
0.1
uA
0.5
uA
0.9
3.0
pF
1.6
4.0
ns
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
V_R=0,f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_R
Marking
Marking
B3