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| 1SS181 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) | |||
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SMD Type
1SS181
Switching Diode
FEATURES
y Low forward voltage
: VF(3)=0.92V(typ.)
y Fast reverse recovery time : trr=1.6ns(typ.)
Diodes
SOT-23
1. CATHODE
2. CATHODE
3. ANODE
Maximum Ratings @TA=25â
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
85
V
DC Blocking Voltage
VR
80
V
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
100
mA
Power Dissipation
PD
150
mW
Junction temperature
TJ
125
â
Storage temperature range
TSTG
-55-125
â
Electrical Characteristics @TA=25â
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V (BR)R
VF1
VF2
VF3
IR1
IR2
CT
t rr
Min.
80
Typ.
0.61
0.74
0.92
2.2
1.6
Max. Unit
V
V
V
1.2
V
0.1
uA
0.5
uA
4.0
pF
4.0
ns
Conditions
IR=100μA
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0,f=1MHz
IF=IR=10mA,Irr=0.1ÃIR
Marking
Marking
A3
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