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| ZXTDC3M832 Datasheet, PDF (6/8 Pages) Zetex Semiconductors – MPPS Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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ZXTDC3M832
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
MIN.
-50
TYP. MAX. UNIT
-80
V
CONDITIONS.
IC=-100â®A
-40 -70
V
IC=-10mA*
-7.5 -8.5
V
-25 nA
-25 nA
-25 nA
-25
-150
-195
-210
-260
-40 mV
-220 mV
-300 mV
-300 mV
-370 mV
-0.97 -1.05 V
-0.89 -0.95 V
300 480
300 450
180 290
60
130
12
22
150 190
MHz
19
25 pF
40
ns
435
ns
IE=-100â®A
VCB=-40V
VEB=-6V
VCES=-32V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-50mA*
IC=-1.5A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-2.5A, IB=-250mA*
IC=-2.5A, IB=-250mA*
IC=-2.5A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-0.1A, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-1.5A, VCE=-2V*
IC=-3A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
VCC=-15V, IC=-0.75A
IB1=IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 1 - JUNE 2002
6
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