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| ZXTP25012EZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 20V PNP high gain transistor | |||
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ZXTP25012EZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BVCBO
voltage
Collector-Emitter
breakdown voltage
BVCEO
Emitter-Base breakdown BVEBO
voltage
Collector-Base cut-off
current
ICBO
Emitter Base cut-off
current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Min.
-12
-12
-7
Base-Emitter saturation
voltage
VBE(sat)
Base-Emitter turn-on
voltage
VBE(on)
Static forward current
hFE
500
transfer ratio
300
40
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
Cibo
Cobo
td
tr
ts
tf
Typ. Max. Unit Conditions
-35
V IC = -100μA
-25
V IC= -10mA (*)
-8.5
V IE = -100μA
<-1
-50
nA VCB = -12V
-0.5
μA VCB = -12V, Tamb=100°C
<-1
-50
nA VEB = -5.6V
-55
-155
-185
-200
-990
-70
-265
-355
-285
-1100
mV IC = -1A, IB = -100mA(*)
mV IC = -1A, IB = -10mA(*)
mV IC = -2A, IB = -40mA(*)
mV IC = -4.5A, IB = -450mA(*)
mV IC = -4.5A, IB = -450mA(*)
-865
800
450
85
15
310
127
16.9
41
62
179
65
-975
1500
250
30
mV IC = -4.5A, VCE = -2V(*)
MHz
pF
pF
ns
ns
ns
ns
IC = -10mA, VCE = -2V(*)
IC = -1A, VCE = -2V(*)
IC = -4.5A, VCE = -2V(*)
IC = -10A, VCE = -2V(*)
IC = -50mA, VCE = -10V
f = 100MHz
VEB = -0.5V, f = 1MHz(*)
VCB = -10V, f = 1MHz(*)
VCC = -10V, IC = -1A,
IB1 = -IB2 = -10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ⤠300µs; duty cycle ⤠2%.
Issue 1- December 2007
5
© Zetex Semiconductors plc 2007
www.zetex.com
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