ZXTN25100DZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 100V NPN high gain transistor

ZXTN25100DZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BV_CBO
BV_CEX
BV_CEO
BV_ECX
BV_ECO
BV_EBO
I_CBO
Collector-Emitter cut-off I_CEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Min.
180
180
100
6
6
7
Base-Emitter saturation
voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
300
transfer ratio
120
40
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_obo
t_d
t_r
t_s
t_f
Typ.
220
220
130
8.2
8.7
Max.
Unit Conditions
V I_C = 100μA
V I_C = 100μA, R_BE < 1kΩ or
-1V > V_BE > 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100μA, R_BC < 1kΩ or
0.25V > V_BC > -0.25V
V I_E = 100μA
8.3
<1
<1
120
80
220
935
890
450
170
60
20
175
154
8.7
16.4
115
763
158
V I_E = 100μA
50
0.5
100
50
170
100
345
1000
950
nA V_CB = 180V
μA ^V_CB ^=180V,T_amb^=100°C
nA V_CE = 100V, R_BE < 1kΩ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 0.5A, IB = 10mA}^(*)
mV _{IC = 1A, IB = 100mA}(*)
mV _{IC = 2.5A, IB = 250mA}(*)
mV _{IC = 2.5A, IB = 250mA}^(*)
mV _{IC = 2.5A, VCE = 2V}^(*)
900
I_C = 10mA, V_CE = 2V^(*)
I_C = 0.5A, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
I_C = 2.5A, V_CE = 2V^(*)
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
250
pF _{VEB = 0.5V, f = 1MHz}^(*)
15
pF _{VCB = 10V, f = 1MHz}^(*)
ns
ns ^{IC = 500mA, VCC = 10V,}
ns ^{IB1 = -IB2 = 50mA}
ns
NOTES:
(*)Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
Issue 1 - December 2007
5
© Zetex Semiconductors plc 2007
www.zetex.com