ZXTN25040DZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 40V, SOT89, NPN medium power transistor

ZXTN25040DZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BV_CBO
130 170
V I_C = 100␮A
Collector-emitter breakdown BV_CEX
voltage (forward blocking)
130 170
V V_CE = 130V; R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
Collector-emitter breakdown BV_CEO
40
63
voltage (base open)
V _{IC = 10mA} ^(*)
Emitter-base breakdown voltage BV_EBO
7
8.3
V I_E = 100␮A
Emitter-collector breakdown BV_ECX
6
7.4
voltage (reverse blocking)
V I_E = 100␮A, R_BC Յ 1k⍀ or
0.25V > V_BC > -0.25V
Emitter-collector breakdown BV_ECO
6
7.4
voltage (base open)
V I_E = 100␮A,
Collector-base cut-off current I_CBO
<1
50
nA V_CB = 100V
20
␮A _{VCB = 100V, Tamb= 100°C}
Collector-emitter cut-off
I_CEX
current
-
100 nA V_CE = 100V; R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
Emitter-base cut-off current I_EBO
<1
50
nA V_EB = 5.6V
Collector-emitter saturation V_CE(sat)
voltage
50
60 mV I_C = 1A, I_B = 100mA^(*)
125 215 mV I_C = 1A, I_B = 10mA^(*)
140 215 mV I_C = 2A, I_B = 40mA^(*)
190 260 mV I_C = 5A, I_B = 500mA^(*)
Base-emitter saturation voltage V_BE(sat)
1000 1100 mV _{IC = 5A, IB = 500mA}^(*)
Base-emitter turn-on voltage V_BE(on)
910 1000 mV _{IC = 5A, VCE = 2V}^(*)
Static forward current
transfer ratio
h_FE
300 450 900
300 450
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
20 40
I_C = 5A, V_CE = 2V^(*)
10
I_C = 10A, V_CE = 2V^(*)
Transition frequency
f_T
190
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
11.7 20
64
108
428
130
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V
ns ^{IC = 1A,}
ns ^{IB1 = IB2= 10mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 2 - January 2007
5
© Zetex Semiconductors plc 2007
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