ZXMD63C03X Datasheet, PDF (5/11 Pages) Zetex Semiconductors – 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMD63C03X
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
V_(BR)DSS 30
I_DSS
I_GSS
V_GS(th) 1.0
R_DS(on)
g_fs
1.9
V
I_D=250µA, V_GS=0V
1
µA V_DS=30V, V_GS=0V
100
nA V_GS=± 20V, V_DS=0V
V
I_D=250µA, V_DS= V_GS
0.135 Ω
0.200 Ω
V_GS=10V, I_D=1.7A
V_GS=4.5V, I_D=0.85A
S
V_DS=10V,I_D=0.85A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
C_iss
C_oss
C_rss
290
pF
V_DS=25 V, V_GS=0V,
70
pF f=1MHz
20
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
2.5
ns
4.1
ns _{VDD =15V, ID=1.7A}
9.6
ns
R_G=6.1Ω, R_D=8.7Ω
(Refer to test
4.4
ns ^circuit)
8
nC
V _{D S}= 24 V , V _GS= 1 0V ,
1.2
nC I_D=1.7A
(Refer to test
2
nC _circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V_SD
0.95
Reverse Recovery Time (3)
t_rr
16.9
Reverse Recovery Charge(3)
Q_rr
9.5
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V
T_j=25°C, I_S=1.7A,
V _{G S}= 0V
ns T_j=25°C, I_F=1.7A,
di/dt= 100A/µs
nC
PROVISIONAL ISSUE A - JUNE 1999
17