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| ZXTP5401G Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 150V, SOT223, PNP High voltage transistor | |||
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ZXTP5401G
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Collector-emitter saturation
voltage
VCE(sat)
Base-emitter saturation
voltage
VBE(sat)
Static forward current transfer hFE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
COBO
t(d)
t(r)
t(s)
t(f)
Min. Typ. Max. Unit Conditions
-160 -270
V IC = -100â®A,
-150 -240
V IC = -1mA *
-5 -8.1
V IE = -10â®A
<-1 -50 nA VCB = -120V
-50 â®A VCB = -120V, Tamb= 100°C
-50 -200 mV IC = -10mA, IB = -1mA *
-70 -500 mV IC = -50mA, IB = -5mA *
-700 -1000 mV IC = -10mA, IB = -1mA *
-750 -1000 mV IC = -50mA, IB = -5mA *
50 135
IC = -1mA, VCE = -5V *
60 135 240
IC = -10mA, VCE = -5V *
50 130
IC = -50mA, VCE = -5V *
100
MHz IC = -10mA, VCE = -10V
f = 100MHz
6
386
202
pF VCB = -10V, f = 1MHz *
ns VCC = -50V. IC = -100mA,
ns IB1 = IB2= -10mA.
1720
ns
275
ns
Issue 1 - August 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com
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