ZXTP25140BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 140V, SOT23, PNP medium power transistor

ZXTP25140BFH
Electrical characteristics (at T_AMB = 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
(forward blocking)
Symbol Min.
BV_CBO -180
BV_CEX, -180
Collector-emitter
BV_CEO
breakdown voltage (base
open)
-140
Typ.
-205
-205
-160
Max.
Unit Conditions
V I_C = -100␮A
V I_C = -100␮A,
R_BE Յ 1k⍀ or
-0.25V < V_BE < 1V
V _{IC = -10mA} ^(*)
Emitter-collector
breakdown voltage
BV_ECO
-7
(reverse blocking)
Emitter-base breakdown BV_EBO
-7
voltage
Collector cut-off current I_CBO
Collector emitter cut-off I_CEX
current
Emitter cut-off current
Collector-emitter
saturation voltage
I_EBO
V_ce(sat)
Base-emitter saturation V_be(sat)
voltage
Base-emitter turn-on
voltage
V_BE(ON)
Static forward current
h_FE
100
transfer ratio
100
20
Transition frequency
f_T
-8.5
V _{IE = -100uA} ^(*)
-8.2
V I_E = -100␮A
<-1
-
<-1
-40
-110
-90
-170
-180
-850
-800
200
190
30
75
-50
-20
-100
-50
-50
-135
-110
-230
-260
-950
-900
300
nA V_CB = -144V
␮A _{VCB = -144V, TAMB= 100°C}
nA V_CE = -144V;
R_BE Յ 1k⍀ or
-0.25V < V_BE < 1V
nA V_EB = -5.6V
mV _{IC = -0.1A, IB = -10mA} ^(*)
mV _{IC = -0.1A, IB = -2mA} ^(*)
mV _{IC = -0.5A, IB = -50mA} ^(*)
mV _{IC = -0.5A, IB = -25mA} ^(*)
mV _{IC = -1A, IB = -100mA} ^(*)
mV _{IC = -1A, IB = -100mA} ^(*)
mV _{IC = -1A, VCE = -2V} ^(*)
MHz
I_C = -10mA, V_CE = -2V ^(*)
I_C = -0.1A, V_CE = -2V ^(*)
I_C = -1A, V_CE = -2V ^(*)
I_C = -10mA, V_CE = -20V
f = 20MHz
Output capacitance
Turn-on time
Turn-off time
C_OBO
t_(on)
t_(off)
10
pF _{VCB = -20V, f = 1MHz} ^(*)
102
ns V_CC = -20V. I_C = -100mA,
I_B1 = I_B2= -10mA
854
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - March 2006
4
© Zetex Semiconductors plc 2006
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