ZXTP25100CFH Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 100V, SOT23, PNP medium power transistor

ZXTP25100CFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECX
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
BV_ECO
I_CBO
Collector emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_CEX
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_obo
t_d
t_r
t_s
t_f
Min.
-115
-100
-7
-7
-7
200
180
110
20
Typ.
-180
-140
-8.4
-8.3
-8.8
<-1
-
<-1
-140
-80
-180
-150
-845
-790
350
320
190
35
180
14.1
15.8
41
411
89
Max. Unit Conditions
V I_C = -100␮A
V _{IC = -10mA} ^(*)
V I_E = -100␮A
V I_E = -100␮A, R_BC < 1k⍀ or
-0.25 < V_BC < 0.25V
V I_E = -100␮A
-50
-0.5
-100
-50
-210
-110
-310
-220
-950
nA V_CB = -115V
␮A V_CB = -115V, T_amb= 100°C
nA V_CE = -90V, R_BE < 1k⍀ or
-0.25V < V_BE < 1V
nA V_EB = -5.6V
mV _{IC = -100mA, IB = -1mA}^(*)
mV _{IC = -500mA, IB = -50mA}^(*)
mV _{IC = -500mA, IB = -20mA}^(*)
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -100mA}^(*)
-900
500
20
mV _{IC = -1A, VCE = -2V}^(*)
I_C = -10mA, V_CE = -2V^(*)
I_C = -100mA, V_CE = -2V^(*)
I_C = -500mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
MHz I_C = -20mA, V_CE = -15V
f = 100MHz
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -10V.
ns ^{IC = -500mA,}
ns ^{IB1 = IB2= -50mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 2 - October 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com