ZXTP25060BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 60V, SOT23, PNP medium power transistor

ZXTP25060BFH
Electrical characteristics (at T_AMB = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter
breakdown voltage
(forward blocking)
BV_CEX,
Min.
-100
-100
Collector-emitter
BV_CEO
-60
breakdown voltage (base
open)
Emitter-collector
breakdown voltage
(reverse blocking)
BV_ECO
-7
Emitter-base breakdown BV_EBO
-7
voltage
Collector cut-off current I_CBO
Collector emitter cut-off I_CEX
current
Emitter cut-off current
Collector-emitter
saturation voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
V_BE(sat)
V_BE(on)
h_FE
100
75
30
f_T
Output capacitance
Turn-on time
Turn-off time
C_OBO
t_(on)
t_(off)
Typ. Max. Unit Conditions
-120
V I_C = -100mA
-120
-80
V I_C = -100mA,
R_BE < 1k⍀ or
-0.25V < V_BE < 1V
V _{IC = -10mA} ^(*)
-8.6
V _{IE = -100uA} ^(*)
-8.1
V I_E = -100mA
<-1
-
<-1
-45
-100
-70
-175
-940
-50
-20
-100
-50
-55
-135
-85
-235
-1040
nA V_CB = -80V
␮A _{VCB = -80V, TAMB= 100°C}
nA V_CE = -80V;
R_BE < 1k⍀ or
-0.25V < V_BE < 1V
nA V_EB = -5.6V
mV _{IC = -0.5A, IB = -50mA} ^(*)
mV _{IC = -0.5A, IB = -10mA} ^(*)
mV _{IC = -1A, IB = -100mA} ^(*)
mV _{IC = -3A, IB = -300mA} ^(*)
mV _{IC = -3A, IB = -300mA} ^(*)
-830 -930 mV _{IC = -3A, VCE = -2V} ^(*)
200 300
I_C = -10mA, V_CE = -2V ^(*)
150
I_C = -1A, V_CE = -2V ^(*)
60
I_C = -3A, V_CE = -2V ^(*)
250
MHz I_C = -100mA, V_CE = -5V
f = 100MHz
17.6 30
26.5
291
pF _{VCB = -10V, f = 1MHz} ^(*)
ns V_CC = -10V. I_C = -500mA,
ns ^IB1 ^{= I}B2^{= -50mA.}
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - March 2006
4
© Zetex Semiconductors plc 2006
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