ZXTP25040DFL Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 40V, SOT23, PNP low power transistor

ZXTP25040DFL
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-base breakdown
voltage
Collector cut-off current
Symbol Min.
BV_CBO
-45
BV_CEO
-40
BV_ECO
-3
BV_EBO
-7
I_CBO
Emitter cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
300
ratio
120
15
Transition frequency
f_T
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_obo
t_(d)
t_(r)
t_(s)
t_(f)
Typ. Max. Unit Conditions
-75
V I_C = -100␮A
-65
V _{IC = -10mA} ^(*)
-8.7
V _{IE = -100␮A}^(*)
-8.2
V I_E = -100␮A
<-1
<-1
-75
-200
-95
-160
-245
-915
-50
-20
-50
-95
-290
-115
-190
-300
-1000
nA V_CB = -36V
␮A _{VCB = -36V, Tamb= 100°C}
nA V_EB = -5.6V
mV _{IC = -0.5A, IB = -20mA}^(*)
mV _{IC = -1A, IB = -20mA}^(*)
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1.5A, IB = -75mA}^(*)
mV _{IC = -3A, IB = -300mA}^(*)
mV _{IC = -1.5A, IB = -75mA}^(*)
-825
450
200
40
270
17.4
34
41
266
53
-900
900
mV _{IC = -1.5A, VCE = -2V}^(*)
I_C = -10mA, V_CE = -2V^(*)
I_C = -1.5A, V_CE = -2V^(*)
I_C = -3A, V_CE = -2V^(*)
MHz I_C = -50mA, V_CE = -10V
f = 50MHz
25 pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -15V. I_C = -750mA,
ns ^{IB1 = IB2= -15mA.}
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
Issue 3 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com