ZXTP25020DG Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V PNP high gain transistor

ZXTP25020DG
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BV_CBO
voltage
Collector-Emitter
breakdown voltage
BV_CEO
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECO
Emitter-Base breakdown BV_EBO
voltage
Collector-Base cut-off
current
I_CBO
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
V_BE(sat)
V_BE(on)
h_FE
Transition frequency
f_T
Min.
-25
-20
-4
-4
-7
300
200
25
Typ. Max.
-55
-45
-8.5
-8.5
-8.3
<1
<1
-50
-150
-190
-250
-1050
50
0.5
100
-65
-215
-245
-355
-1150
-910 -1000
450 900
310
50
20
290
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
157 400
21
30
14.2
16.3
186
32.7
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Unit Conditions
V I_C = -100μA
V _{IC= -10mA} ^(*)
V I_E = -100μA, R_BC < 1kΩ or
0.25V > V_BC > -0.25V
V I_E = -100μA
V I_E = -100μA
nA V_CB = -25V
μA V_CB = -25V, T_amb=100°C
nA V_EB = -5.6V
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -10mA}^(*)
mV I_C = -2A, I_B = -40mA^(*)
mV I_C = -6A, I_B = -600mA^(*)
mV _{IC = -6A, IB = -600mA}^(*)
mV _{IC = -6A, VCE = -2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = -10mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -6A, V_CE = -2V^(*)
I_C = -10A, V_CE = -2V^(*)
I_C = -50mA, V_CE = -10V
f = 50MHz
V_EB = -0.5V, f = 1MHz^(*)
V_CB = -10V, f = 1MHz^(*)
I_C = -1A, V_CC = -10V,
I_B1 = -I_B2 = -50mA
Issue 1- December 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com