ZXTP25020DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V, SOT23, PNP medium power transistor

ZXTP25020DFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Emitter-collector breakdown BV_ECO
voltage (reverse blocking)
Collector cut-off current
I_CBO
Min.
-25
-20
-7
-4
Emitter cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
V_BE(sat)
V_BE(on)
h_FE
300
200
70
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_(d)
t_(r)
t_(s)
t_(f)
Typ.
-55
Max.
Unit Conditions
V I_C = -100␮A
-45
V _{IC = -10mA} ^(*)
-8.3
V I_E = -100␮A
-8.5
V _{IC = -100␮A}^(*)
<-1 -50 nA V_CB = -20V
-20 ␮A V_CB = -20V, T_amb= 100°C
<-1 -50 nA V_EB = -5.6V
-50
-60
mV I_C = -1A, I_B = -100mA^(*)
-150 -210 mV I_C = -1A, I_B = -10mA^(*)
-180 -240 mV I_C = -2A, I_B = -40mA^(*)
-155 -180 mV I_C = -4A, I_B = -400mA^(*)
-960 -1050 mV I_C = -4A, I_B = -400mA^(*)
-815 -900 mV _{IC = -4A, VCE = -2V}^(*)
450 900
I_C = -10mA, V_CE = -2V^(*)
310
I_C = -1A, V_CE = -2V^(*)
100
I_C = -4A, V_CE = -2V^(*)
20
I_C = -10A, V_CE = -2V^(*)
290
MHz I_C = -50mA, V_CE = -10V
f = 50MHz
21
30
14.2
16.3
pF _{VCB = -10V, f = 1MHz}^(*)
V_CC = -10V. I_C = -1A, I_B1
= I_B2= -50mA.
186
32.7
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - July 2006
4
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