ZXTP25020CFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V, SOT23, PNP medium power transistor

ZXTP25020CFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Emitter-collector breakdown BV_ECX
voltage (reverse blocking)
Min.
-25
-20
-7
-7
Emitter-collector breakdown BV_ECO
-7
voltage (base open)
Collector-base cut-off
current
I_CBO
Emitter-base cut-off current I_EBO
Collector-emitter saturation V_CE(sat)
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage
V_BE(sat)
V_BE(on)
Static forward current
h_FE
200
transfer ratio
150
85
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_d
t_r
t_s
t_f
Typ. Max. Unit Conditions
-50
V I_C = -100␮A
-35
V _{IC = -10mA} ^(*)
-8.2
V I_E = -100␮A
-8.0
V _{IE = -100␮A}^(*) _{RBC < 10k⍀}
or 0.25 < V_BC < -0.25V
-8.8
V _{IE = -100␮A}^(*)
<-1
<-1
-43
-70
-120
-150
-930
-50
-20
-50
-55
-100
-170
-210
-1050
nA V_CB = -20V
␮A _{VCB = -20V, Tamb= 100°C}
nA V_EB = -5.6V
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -20mA}^(*)
mV _{IC = -2A, IB = -40mA}^(*)
mV _{IC = -4A, IB = -200mA}^(*)
mV _{IC = -4A, IB = -200mA}^(*)
-810
350
250
140
40
285
32.4
38.4
49.2
168
55
-900
500
40
mV _{IC = -4A, VCE = -2V}^(*)
I_C = -10mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -4A, V_CE = -2V^(*)
I_C = -10A, V_CE = -2V^(*)
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -15V.
ns ^IC ^{= -750mA,}
ns ^{IB1 = IB2= -15mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - May 2006
4
© Zetex Semiconductors plc 2006
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