ZXTP25020CFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V, SOT23F, PNP medium power transistor

ZXTP25020CFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECX
BV_ECO
I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
f_T
Min.
-25
-20
-7
-7
-7
200
150
85
Typ. Max. Unit Conditions
-50
V I_C = -100␮A
-35
V _{IC = -10mA} ^(*)
-8.2
V I_E = -100␮A
-8.0
V _{IE = -100␮A}^(*) _{RBC < 10k⍀}
or -0.25 < V_BC <0.25V
-8.8
V _{IE = -100uA}^(*)
<-1 -50 nA V_CB = -20V
-20 ␮A V_CB = -20V, T_amb= 100°C
<-1 -50 nA V_EB = -5.6V
-50 -65 mV _{IC = -1A, IB = -100mA}^(*)
-80 -110 mV _{IC = -1A, IB = -20mA}^(*)
-135 -185 mV _{IC = -2A, IB = -40mA}^(*)
-210 -260 mV _{IC = -4.5A, IB = -225mA}^(*)
-950 -1050 mV _{IC = -4.5A, IB = -225mA}^(*)
-840 -950 mV _{IC = -4.5A, VCE = -2V}^(*)
350 500
I_C = -10mA, V_CE = -2V^(*)
250
I_C = -1A, V_CE = -2V^(*)
140
I_C = -4A, V_CE = -2V^(*)
40
I_C = -10A, V_CE = -2V^(*)
285
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_obo
t_d
t_r
t_s
t_f
32.4 40
38.4
49.2
168
55
pF _{VCB = -10V, f = 1MHz} ^(*)
ns V_CC = -15V.
ns ^{IC = -750mA,}
ns ^{IB1 = IB2= -15mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - February 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com