ZXTP25012EFH Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 12V, SOT23, PNP medium power transistor

ZXTP25012EFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Collector-base cut-off
current
I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_obo
t_d
t_r
t_s
t_f
Min.
-12
-12
-7
500
300
50
Typ. Max. Unit Conditions
-35
V I_C = -100␮A
-25
V _{IC = -10mA} ^(*)
-8.5
V I_E = -100␮A
<-1 -50
-20
<-1 -50
-50 -65
-150 -260
-175 -350
-160 -210
-970 -1050
nA V_CB = -9.6V
␮A V_CB = -9.6V, T_amb= 100°C
nA V_EB = -5.6V
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -10mA}^(*)
mV _{IC = -2A, IB = -40mA}^(*)
mV _{IC = -4A, IB = -400mA}^(*)
mV _{IC = -4A, IB = -400mA}^(*)
-825
800
450
100
310
-950
1500
mV _{IC = -4A, VCE = -2V}^(*)
I_C = -10mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -4A, V_CE = -2V^(*)
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
16.9
41
62
179
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -10V
ns ^{IC = -1A,}
I_B1 = I_B2= -10mA
ns
65
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com