ZXTP23140BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 140V SOT23 PNP medium power transistor

ZXTP23140BFH
ELECTRICAL CHARACTERISTICS (at T_AMB = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol
V_(BR)CBO
V_(BR)CEX
Collector-emitter breakdown
voltage
V_(BR)CEO
Emitter-base breakdown voltage V_(BR)EBO
Collector-emitter cut-off current I_CEX
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
I_CBO
I_EBO
H_FE
Collector-emitter saturation
voltage
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Transition frequency
f_T
Output capacitance
Turn–on time
C_obo
t _(on)
Turn-off time
t _(off)
Min.
-160
-160
-140
-7.0
100
100
40
Typ.
-180
-180
-160
-8.2
-
<1
<1
200
180
100
-45
-80
-190
-0.89
-0.78
130
30.9
132.4
345.5
Max.
-100
-20
-10
300
-55
-95
-280
-1.00
-0.90
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
V
V
MHz
pF
ns
ns
Conditions
I_C=-100␮A
I_C =-100␮A,
R_BE Յ 1k⍀ OR
-0.25V < V_BE < 1V
I_C=-10mA ^(*)
I_E=-100␮A
V_CE =-130V;
R_BE Յ 1k⍀ OR
-0.25V < V_BE < 1V
V_CB=-130V
V_EB=-6V
I_C= -10mA, V_CE=-5V ^(*)
I_C=-1A, V_CE=-5V ^(*)
Ic=-2.5A, V_CE=-5V
I_C=-100mA, I_B=-5mA ^(*)
I_C=-1A, I_B=-100mA ^(*)
I_C=-2.5A, I_B=-250mA ^(*)
I_C=-2.5A, I_B=-250mA ^(*)
I_C=-2.5A, V_CE=-5V ^(*)
Ic=-100mA, V_CE=-10V,
f=50MHz
V_CB=-10V, f=1MHz
V_CC=-10V, I_C=-2A,
I_B1=I_B2=-200mA
NOTES:
(*) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%.
Issue 1 - February 2006
4
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