ZXTP2027F Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 60V, SOT23, PNP medium power transistor

ZXTP2027F
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Symbol
V_(BR)CBO
V_(BR)CEV
V_(BR)CEO
V_(BR)EBO
I_CEV
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
I_CBO
I_EBO
H_FE
Collector-emitter saturation
voltage
V_CE(SAT)
Base-Emitter saturation
voltage
Base-Emitter turn-on voltage
Transition frequency
V_BE(SAT)
V_BE(on)
f_T
Output capacitance
Turn–on time
Turn-off time
C_obo
t_(on)
t_(off)
Min. Typ. Max. Unit Conditions
-100 -120
V I_C=-100µA
-100 -120
V I_C =−1µA, 1V> V_BE>-0.3V
-60 -75
-7.0 -8.2
V _IC=-10mA ^(a)
V I_E=-100µA
-20 nA V_CE=-80V,
V_BE = 1V
-20 nA V_CB=-80V
-10 nA V_EB=-6V
100 250
100 200 300
80 145
20 40
I_C=-10mA, V_CE=-2V^(a)
I_C=-2A, V_CE=-2V^(a)
Ic=-4A, V_CE=-2V^(a)
Ic=-10A, V_CE=-2V^(a)
-15
-45
-70
-155
-25
-60
-95
-240
mV _{IC=-100mA, IB=-10mA}^(a)
mV _{IC=-1A, IB=-100mA}^(a)
mV _{IC=-2A, IB=-200mA}^(a)
mV _{IC=-4A, IB=-200mA}^(a)
-0.89 -1.0
V _{IC=-4A, IB=-200mA}^(a)
-0.81
165
44
32
305
-0.95
V
MHz
pF
ns
ns
I_C=-4A, V_CE=-2V^(a)
Ic=-100mA, V_CE=-10V,
f=50MHz
V_CB=-10V, f=1MHz
V_CC=-10V, I_C=-2A,
I_B1=I_B2=-200mA
NOTES:
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%.
Issue 2 - September 2005
4
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