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ZXTP2013G Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | |||
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ZXTP2013G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
R Õ
1kâ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
HFE
fT
-140
-140
-100
-7
100
100
25
15
-160
-160
-115
-8.1
Ͻ1
Ͻ1
Ͻ1
-20
-70
-120
-240
-985
-920
250
200
50
30
5
125
-20
-0.5
-20
-0.5
-10
-30
-90
-150
-340
-1100
-1050
300
V IC=-100â®A
V IC=-1â®A, RBÕ
1kâ
V IC=-10mA*
V IE=-100â®A
nA VCB=-100V
â®A VCB=-100V,Tamb=100ÐC
nA VCB=-100V
â®A VCB=-100V,Tamb=100ÐC
nA VEB=-6V
mV IC=-0.1A, IB=-10mA*
mV IC=-1A, IB=-100mA*
mV IC=-2A, IB=-200mA*
mV IC=-4A, IB=-400mA*
mV IC=-4A, IB=-400mA*
mV IC=-4A, VCE=-2V*
IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-3A, VCE=-1V*
IC=-4A, VCE=-1V*
IC=-10A, VCE=-1V*
MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
42
pF VCB=-10V, f=1MHz*
42
ns IC=-1A, VCC=-10V,
540
IB1=IB2=-100mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2005
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