ZXTP19100CFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 100V, SOT23F, PNP medium power transistor

ZXTP19100CFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol
Collector-Base Breakdown BV_CBO
Voltage
Collector-Emitter
BV_CEX
Breakdown Voltage (Base
open)
Collector-Emitter
BV_CEO
Breakdown Voltage (Base
open)
Emitter-Base Breakdown BV_EBO
Voltage
Emitter-Collector
Breakdown Voltage
(Reverse Blocking)
BV_ECX
Emitter-Collector
BV_ECO
Breakdown Voltage (Base
open)
Collector-Base Cut-Off
Current
I_CBO
Emitter-Base Cut-Off
Current
Collector-Emitter
Saturation Voltage
I_EBO
V_CE(sat)
Min.
-110
-110
-100
-7
-7
-7
Base-Emitter Saturation V_BE(sat)
Voltage
Base-Emitter Turn-On
Voltage
V_BE(on)
Static Forward Current h_FE
200
Transfer Ratio
70
20
Transition Frequency
f_T
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
C_ibo
C_obo
t_d
t_r
t_s
t_f
Typ.
-135
-135
-135
-8.3
-8.3
-8.7
<-1
<-1
-100
-95
-175
-215
-870
-810
330
135
30
142
291
23.5
24.7
22.4
660
107
Max.
-50
-0.5
-50
-130
-120
-225
-275
-950
-900
500
400
Unit Conditions
V I_C = -100␮A
V I_C = -100␮A, R_BC < 1kΩ or
0.25V > V_BC > -0.25V
V _{IC = -10mA} ^(*)
V I_E = -100␮A
V I_E = -100␮A, R_BC < 1k⑁ or
0.25V > V_BC > -0.25V
V I_E = -100␮A
nA V_CB = -110V
␮A V_CB = -110V, T_amb= 100°C
nA V_EB = -5.6V
mV _{IC = -0.5A, IB = -20mA}^(*)
mV I_C = -1A, I_B = -100mA^(*)
mV I_C = -1A, I_B = -50mA^(*)
mV ^I_C ^{= -2A, I}_B ^{= -200mA(*)}
mV _{IC = -2A, IB = -200mA}^(*)
mV _{IC = -2A, VCE = -2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = -100mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -2A, V_CE = -2V^(*)
I_C = -100mA, V_CE = -10V
f = 50MHz
V_EB = -0.5V, f = 1MHz^(*)
V_CB = -10V, f = 1MHz^(*)
I_C = -500mA, V_CC = -10V
I_B1 = -I_B2= -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300␮s; duty cycle ≤ 2%.
Issue 1 - October 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com