ZXTP19060CFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 60V, SOT23F, PNP medium power transistor

ZXTP19060CFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECX
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
BV_ECO
I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_obo
t_d
t_r
t_s
t_f
Min.
-60
-60
-7
-7
-7
200
160
30
Typ. Max. Unit Conditions
-110
V I_C = -100␮A
-90
V _{IC = -10mA} ^(*)
-8.4
V I_E = -100␮A
-8.4
V I_E = -100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
-8.8
V I_E = -100␮A,
<-1 -50 nA V_CB = -48V
-50 ␮A V_CB = -48V, T_amb= 100°C
<-1 -50 nA V_EB = -5.6V
-60 -75 mV _{IC = -1A, IB = -100mA}^(*)
-140 -200 mV _{IC = -1A, IB = -20mA}^(*)
-180 -270 mV _{IC = -4A, IB = -400mA}^(*)
-935 -1050 mV _{IC = -4A, IB = -400mA}^(*)
-835
350
280
50
180
29.5
24.3
13.2
456
68.2
-950
500
40
mV _{IC = -4A, VCE = -2V}^(*)
I_C = -100mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -4A, V_CE = -2V^(*)
MHz I_C = -50mA, V_CE = -10V
f = 50MHz
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -10V.
ns ^{IC = -500mA,}
ns ^{IB1 = -50mA, IB2= -50mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - May 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com