ZXTP19020DG Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V PNP high gain transistor

ZXTP19020DG
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BV_CBO
voltage
Collector-Emitter
breakdown voltage
BV_CEO
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECO
Emitter-Base breakdown BV_EBO
voltage
Collector-Base cut-off
current
I_CBO
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
V_BE(sat)
V_BE(on)
h_FE
Transition frequency
f_T
Min.
-25
-20
-4
-4
-7
300
200
45
Typ. Max.
-55
-50
-8.6
-8.6
-8.2
<1
<1
-40
-97
-115
-220
-1050
50
0.5
-50
-47
-130
-145
-275
-1150
-930 -1000
450 900
290
70
25
176
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
400
36
45
23
18.4
266
49.6
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Unit Conditions
V I_C = -100μA
V _{IC= -10mA} ^(*)
V I_E = -100μA, R_BC < 1kΩ or
0.25V > V_BC > -0.25V
V I_E = -100μA
V I_E = -100μA
nA V_CB = -25V
μA V_CB = -25V, T_amb=100°C
nA V_EB = -5.6V
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC = -1A, IB = -10mA}^(*)
mV I_C = -2A, I_B = -40mA^(*)
mV I_C = -8A, I_B = -800mA^(*)
mV _{IC = -8A, IB = -800mA}^(*)
mV _{IC = -8A, VCE = -2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = -100mA, V_CE = -2V^(*)
I_C = -2A, V_CE = -2V^(*)
I_C = -8A, V_CE = -2V^(*)
I_C = -15A, V_CE = -2V^(*)
I_C = -50mA, V_CE = -10V
f = 50MHz
V_EB = -0.5V, f = 1MHz^(*)
V_CB = -10V, f = 1MHz^(*)
I_C = -1A, V_CC = -10V,
I_B1 = -I_B2 = -50mA
Issue 1- February 2008
4
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