ZXTP07040DFF Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 40V, SOT23F, PNP medium power transistor

ZXTP07040DFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Emitter-collector breakdown BV_ECO
voltage (reverse blocking)
Collector-base cut-off current I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current
transfer ratio
V_BE(sat)
V_BE(on)
h_FE
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_obo
t_d
t_r
t_s
t_f
Min.
-50
-40
-7
-3
300
250
200
80
100
Typ. Max. Unit Conditions
-80
V I_C = -100␮A
-65
V _{IC = -10mA} ^(*)
-8.3
V I_E = -100␮A
-8.6
V I_E = -100␮A
<-1 -50 nA V_CB = -36V
-20 ␮A V_CB = -36V, T_amb= 100°C
<-1 -50 nA V_EB = -5.6V
-110 -180 mV _{IC = -0.5A, IB = -5mA}^(*)
-80 -100 mV _{IC = -1A, IB = -100mA}^(*)
-230 -400 mV _{IC = -1A, IB = -10mA}^(*)
-310 -540 mV _{IC = -2A, IB = -40mA}^(*)
-250 -390 mV _{IC = -3A, IB = -150mA}^(*)
-935 -1040 mV _{IC = -3A, IB = -150mA}^(*)
-825
450
380
330
160
200
30
20.7
12.2
375
72
-930
800
40
mV _{IC = -3A, VCE = -2V}^(*)
I_C = -10mA, V_CE = -2V^(*)
I_C = -0.5A, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -3A, V_CE = -2V^(*)
MHz I_C = -50mA, V_CE = -5V
f = 50MHz
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -10V,
ns ^{IC = -500mA,}
ns ^{IB1 = IB2= -50mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - September 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com