ZXTP07012EFF Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 12V, SOT23F, PNP medium power transistor

ZXTP07012EFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Collector-base cut-off current I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_obo
t_d
t_r
t_s
t_f
Min. Typ. Max. Unit Conditions
-12 -23
V I_C = -100␮A
-12 -16
-7 -8.4
V _{IC = -10mA} ^(*) _*
V I_E = -100␮A
<-1 -50 nA V_CB = -10V
-20 ␮A V_CB = -10V, T_amb= 100°C
<-1 -50 nA V_EB = -5.6V
-80 -100 mV _{IC = -0.5A, IB = -2.5mA}^(*)
-60 -75 mV _{IC = -1A, IB = -100mA}^(*)
-130 -165 mV _{IC = -1A, IB = -5mA}^(*)
-250 -350 mV _{IC = -2A, IB = -10mA}^(*)
-260 -340 mV _{IC = -4A, IB = -80mA}^(*)
-945 -1050 mV _{IC = -4A, IB = -80mA}^(*)
-850 -950 mV _{IC = -4A, VCE = -2V}^(*)
500 750 1500
I_C = -10mA, V_CE = -2V^(*)
400 570
I_C = -1A, V_CE = -2V^(*)
230 320
I_C = -4A, V_CE = -2V^(*)
150 210
I_C = -6A, V_CE = -2V^(*)
100 250
MHz I_C = -50mA, V_CE = -5V
f = 50MHz
223
24 30
12.8
15.6
240
pF _{VCB = -0.5V, f = 1MHz}^(*)
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -10V.
ns ^{IC = -500mA,}
ns ^{IB1 = IB2= -50mA.}
92.8
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - September 2006
4
© Zetex Semiconductors plc 2006
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