ZXTP05120HFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 120V, SOT23F, PNP medium power Darlington transistor

ZXTP05120HFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Collector-base cut-off current I_CBO
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_CES
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_obo
t_d
t_r
t_s
t_f
Min. Typ. Max. Unit Conditions
-140 -170
V I_C = -100␮A
-120 -140
-10 -16
V _{IC = -10mA} ^(*)
V I_E = -100␮A
<-1 -100
-10
<-0.1 -10
nA V_CB = -120V
␮A V_CB = -120V, T_amb= 100°C
␮A V_CB = -120V
<-1 -100
-0.77 -0.9
-0.9 -1.1
-1.3 -2.0
-1.5 -1.7
nA V_EB = -8V
V _{IC = 250mA, IB = 0.25mA}^(*)
V _{IC = -1A, IB = -1mA}^(*)
V _{IC = -2A, IB = -2mA}^(*)
V _{IC = -1A, IB = -1mA}^(*)
-1.4 -1.7 V _{IC = -1A, VCE = -5V}^(*)
3K 14k
I_C = -50mA, V_CE = -5V^(*)
3K 11k
I_C = -500mA, V_CE = -5V^(*)
3K 10k 30K
I_C = -1A, V_CE = -5V^(*)
2K 8k
I_C = -2A, V_CE = -5V^(*)
150
MHz I_C = -100mA, V_CE = -10V
f = 20MHz
67 90
22 40
556
212
681
pF _{VEB = -0.5V, f = 1MHz}^(*)
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -10V.
ns ^{IC = -0.5A,}
ns ^{IB1 = IB2= -0.5mA.}
304
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - May 2007
4
© Zetex Semiconductors plc 2007
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