ZXTN5551G Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 160V, SOT223, NPN high voltage transistor

ZXTN5551G
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter
breakdown voltage
(base open)
BV_CEO
Emitter-base breakdown BV_EBO
voltage
Collector cut-off current I_CBO
Min.
180
160
6
Collector-emitter
saturation voltage
V_CE(Sat)
Base-emitter saturation
voltage
V_BE(Sat)
Static forward current
h_FE
80
transfer ratio
80
30
Transition frequency
f_T
Output capacitance
Small signal
C_OBO
h_FE
50
Delay time
t_(d)
Rise time
t_(r)
Storage time
t_(s)
Fall time
t_(f)
Typ.
270
200
7.85
<1
65
115
760
840
135
140
65
130
95
64
1256
140
Max.
50
50
150
200
1000
1200
250
6
260
Unit
Conditions
V I_C = 100␮A
V _{IC = 1mA} ^(*)
V I_E = 10␮A
nA
␮A
mV
mV
mV
mV
MHz
V_CB = 120V
V_CB = 120V, T_amb= 100°C
I_C = 10mA, I_B = 1mA ^(*)
I_C = 50mA, I_B = 5mA ^(*)
I_C = 10mA, I_B = 1mA ^(*)
I_C = 50mA, I_B = 5mA ^(*)
I_C = 1mA, V_CE = 5V ^(*)
I_C = 10mA, V_CE = 5V ^(*)
I_C = 50mA, V_CE = 5V ^(*)
I_C = 10mA, V_CE = 10V
f = 100MHz
pF _{VCB = 10V, f = 1MHz} ^(*)
I_C = 10mA, V_CE = 10V,
f=1kHz ^(†)
ns V_CC = 10V. I_C = 10mA,
ns ^{IB1 = IB2= 1mA}
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
(†) Periodic sample test only.
Issue 1 - August 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com