ZXTN25100DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V, SOT23, NPN medium power transistor

ZXTN25100DFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol
BV_CBO
BV_CEX
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
BV_CEO
BV_EBO
BV_ECX
Emitter-collector breakdown BV_ECO
voltage (base open)
Collector-base cut-off current I_CBO
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_CEX
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_d
t_r
t_s
t_f
Min.
180
180
100
7
6
6
300
120
40
Typ. Max. Unit Conditions
220
V I_C = 100␮A
220
V I_C = 100␮A, R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
130
V _{IC = 10mA} ^(*)
8.3
V I_E = 100␮A
8.2
V I_E = 100␮A, R_BC Յ 1k⍀ or
0.25V > V_BC > -0.25V
8.7
V I_E = 100␮A,
<1 50 nA V_CB = 144V
20 ␮A _{VCB = 144V, Tamb= 100°C}
- 100 nA V_CE = 144V; R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
<1 50 nA V_EB = 5.6V
120 170 mV _{IC = 0.5A, IB = 10mA}^(*)
80 95 mV _{IC = 1A, IB = 100mA}^(*)
215 330 mV _{IC = 2.5A, IB = 250mA}^(*)
910 1000 mV _{IC = 2.5A, IB = 250mA}^(*)
860 950 mV _{IC = 2.5A, VCE = 2V}^(*)
450 900
I_C = 10mA, V_CE = 2V^(*)
170
I_C = 0.5A, V_CE = 2V^(*)
60
I_C = 1A, V_CE = 2V^(*)
20
I_C = 2.5A, V_CE = 2V^(*)
175
MHz I_C = 100mA, V_CE = 10V
f = 100MHz
8.7 15
16.4
115
763
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^IC ^{= 500mA,}
ns ^{IB1 = IB2= 50mA.}
158
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - June 2006
4
© Zetex Semiconductors plc 2006
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