ZXTN25060BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 60V, SOT23, NPN medium power transistor

ZXTN25060BFH
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol Min.
BV_CBO 150
BV_CEX 150
Collector-emitter breakdown BV_CEO 60
voltage (base open)
Emitter-collector
BV_ECX
6
breakdown voltage (reverse
blocking)
Emitter-collector
BV_ECO
6
breakdown voltage (base
open)
Emitter-base breakdown BV_EBO
7
voltage
Typ.
190
190
80
8
7
8
Max.
Unit Conditions
V I_C = 100␮A
I_C = 100␮A, R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A, R_BC Յ 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
V I_E = 100␮A
Collector cut-off current
I_CBO
Collector-emitter cut-off
I_CEX
current
Emitter cut-off current
I_EBO
Collector-emitter saturation V_CE(sat)
voltage
Base-emitter saturation
voltage
V_BE(sat)
<1
50
nA V_CB = 120V
20
␮A _{VCB = 120V, Tamb= 100°C}
-
100 nA V_CE = 120V; R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
<1
50
nA V_EB = 5.6V
33
40
mV _{IC = 0,5A, IB = 50mA} ^(*)
73
95
mV _{IC = 0,5A, IB = 10mA} ^(*)
50
65
mV _{IC = 1A, IB = 100mA} ^(*)
150 175 mV _{IC = 3.5A, IB = 350mA} ^(*)
960 1050 mV _{IC = 3.5A, IB = 350mA} ^(*)
Base-emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
V_BE(on)
865 950 mV _{IC = 3.5A, VCE = 2V} ^(*)
h_FE
100 200 300
I_C = 10mA, V_CE = 2V ^(*)
90 180
I_C = 1A, V_CE = 2V ^(*)
25
40
I_C = 3.5A, V_CE = 2V ^(*)
f_T
185
MHz I_C = 100mA, V_CE = 5V
f = 100MHz
Output capacitance
Turn-on time
Turn-off time
C_OBO
t_(on)
t_(off)
11.5 20
34
566
pF _{VCB = 10V, f = 1MHz} ^(*)
ns V_CC = 10V. I_C = 500mA,
ns ^IB1 ^{= I}B2^{= 50mA.}
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.
Issue 1 - March 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com