ZXTN25050DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 50V, SOT23, NPN medium power transistor

ZXTN25050DFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown voltage BV_CBO
Collector-emitter breakdown
voltage (forward blocking)
BV_CEX
Min.
150
150
Collector-emitter breakdown
voltage (base open)
BV_CEO
50
Emitter-collector breakdown BV_ECX
5
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Emitter-base breakdown
voltage
BV_ECO
5
BV_EBO
7
Typ.
180
180
67
8
7.4
8.3
Max.
Unit
V
V
V
Conditions
I_C = 100␮A
I_C = 100␮A, R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
I_C = 10mA ^(*)
V I_E = 100␮A, R_BC Յ 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
V I_E = 100␮A
Collector cut-off current
I_CBO
Collector-emitter cut-off
current
Emitter cut-off current
Collector-emitter saturation
voltage
I_CEX
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
<1 50 nA V_CB = 150V
20
␮A _{VCB = 150V, Tamb= 100°C}
-
100 nA V_CE = 150V; R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
<1 50 nA V_EB = 5.6V
50
60 mV _{IC = 1A, IB = 100mA} ^(*)
160 260 mV _{IC = 1A, IB = 10mA} ^(*)
180 250 mV _{IC = 2A, IB = 40mA} ^(*)
190 235 mV _{IC = 3,5A, IB = 175mA} ^(*)
160 210 mV _{IC = 4A, IB = 400mA} ^(*)
970 1070 mV _{IC = 4A, IB = 400mA} ^(*)
Base-emitter turn-on voltage
V_BE(on)
870 970 mV _{IC = 4A, VCE = 2V} ^(*)
Static forward current transfer h_FE
ratio
300 450 900
240 410
I_C = 10mA, V_CE = 2V ^(*)
I_C = 1A, V_CE = 2V ^(*)
20 40
I_C = 4A, V_CE = 2V ^(*)
Transition frequency
f_T
200
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Output capacitance
C_OBO
12 20 pF
Delay time
t_(d)
65
ns
Rise time
t_(r)
111
ns
Storage time
t_(s)
429
ns
Fall time
t_(f)
140
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
V_CB = 10V, f = 1MHz ^(*)
V_CC = 10V. I_C = 1A,
I_B1 = I_B2= 10mA.
Issue 3 - September 2006
4
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