ZXTN25020DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V SOT23 NPN medium power transistor

ZXTN25020DFH
Electrical characteristics (at T_AMB = 25°C unless otherwise stated)
Parameter
Symbol
Collector base breakdown voltage BV_CBO
Collector emitter breakdown
voltage (forward blocking)
BV_CEX
Min.
100
100
Collector emitter breakdown
voltage (base open)
Emitter-collector breakdown
voltage (reverse blocking)
BV_CEO 20
BV_ECX
6
Emitter-collector breakdown
BV_ECO
5
voltage (base open)
Emitter base breakdown voltage BV_EBO
7
Collector cut-off current
I_CBO
Collector emitter cut-off current I_CEX
Emitter cut-off current
Collector emitter saturation
voltage
I_EBO
V_CE(sat)
Base emitter saturation voltage V_BE(sat)
Base emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
300
ratio
250
120
Transition frequency
f_T
Typ.
125
120
35
8
6
8.3
<1
-
<1
35
55
90
125
125
205
900
820
450
380
170
15
215
Max.
Unit Conditions
V I_C = 100␮A
I_C = 100␮A, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100mA,
50
20
100
50
43
70
110
170
150
265
1000
900
900
V I_E = 100mA
nA V_CB = 80V
␮A _{VCB = 80V, TAMB= 100°C}
nA V_CE = 80V; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 20mA}^(*)
mV _{IC = 2A, IB = 40mA}^(*)
mV _{IC = 2A, IB = 20mA}^(*)
mV _{IC = 4,5A, IB = 450mA} ^(*)
mV _{IC = 4.5A, IB = 90mA}^(*)
mV _{IC = 4.5A, IB = 90mA}^(*)
mV _{IC = 4.5A, VCE = 2V}^(*)
I_C = 10mA, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
I_C = 4.5A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
Output capacitance
Turn-on time
Turn-off time
C_OBO
t_(on)
t_(off)
16.5
140
425
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V. I_C = 1A,
I_B1 = I_B2= 10mA.
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - February 2006
4
© Zetex Semiconductors plc 2006
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