ZXTN25020BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V, SOT23, NPN medium power transistor

ZXTN25020BFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
Symbol Min.
BV_CBO
50
BV_CEX
50
BV_CEO
20
BV_EBO
7
BV_ECX
6
BV_ECO
3
I_CBO
Collector-emitter cut-off current I_CEX
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
100
ratio
100
75
30
Transition frequency
f_T
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
Typ.
90
90
27
8
7
4.7
<1
-
<1
35
55
90
175
120
910
825
200
210
160
70
185
22.7
87
119
146
61
Max. Unit Conditions
V I_C = 100␮A
I_C = 100␮A, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
50
20
100
50
45
80
115
240
145
1000
900
300
30
nA V_CB = 40V
␮A _{VCB = 40V, Tamb= 100°C}
nA V_CE = 40V; R_BE < 1k⍀ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 20mA}^(*)
mV _{IC = 2A, IB = 40mA}^(*)
mV _{IC = 4.5A, IB = 90mA}^(*)
mV _{IC = 4.5A, IB = 450mA}^(*)
mV _{IC = 4.5A, IB = 90mA}^(*)
mV _{IC = 4.5A, VCE = 2V}^(*)
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
I_C = 4.5A, V_CE = 2V^(*)
I_C = 10A, V_CE = 2V^(*)
MHz I_C = 50mA, V_CE = 10V
f = 100MHz
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^IC ^{= 1A,}
ns ^{IB1 = IB2= 10mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
Issue 1 - May 2006
4
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