ZXTN25015DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 15V, NPN medium power transistor

ZXTN25015DFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage (reverse blocking)
Symbol
BV_CEO
BV_ECX
Collector-emitter breakdown
voltage (reverse blocking)
BV_ECO
Emitter-base breakdown voltage BV_EBO
Collector cut-off current
I_CBO
Collector-emitter cut-off current I_CEX
Emitter cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_(d)
t_(r)
t_(s)
t_(f)
Min.
15
6
4.5
7
300
300
150
25
150
Typ.
22
8
5.3
8.2
<1
-
<1
30
60
90
125
160
990
805
450
400
275
40
240
22.7
16
41
148
23
Max.
50
20
100
50
40
80
125
155
215
1090
900
900
30
Unit Conditions
V _{IC = 10mA} ^(*)
V I_E = 100␮A, R_BC < 1k⍀
or
0.25v > V_BC > -0.25V
V I_E = 100␮A,
V
nA
␮A
nA
nA
mV
mV
mV
mV
mV
mV
mV
MHz
I_E = 100␮A
V_CB = 40V
V_CB = 40V, T_amb= 100°C
V_CE = 30V; R_BE < 1k⍀
or
-1V < V_BE < 0.25V
V_EB = 5.6V
I_C = 1A, I_B = 100mA^(*)
I_C = 1A, I_B = 10mA^(*)
I_C = 2A, I_B = 20mA^(*)
I_C = 5A, I_B = 500mA^(*)
I_C = 5A, I_B = 100mA^(*)
I_C = 5A, I_B = 500mA^(*)
I_C = 5A, V_CE = 2V^(*)
I_C = 10mA, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
I_C = 5A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
I_C = 50mA, V_CE = 10V
f = 50MHz
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V. I_C = 3A, I_B1 =
ns ^IB2^{= 50mA.}
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
Issue 1 - May 2006
4
© Zetex Semiconductors plc 2006
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