ZXTN23015CFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 15V, SOT23, NPN medium power transistor

ZXTN23015CFH
Electrical characteristics (at T_AMB = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol
V_(BR)CBO
V_(BR)CEX
Collector-emitter breakdown
voltage
V_(BR)CEO
Emitter-base breakdown voltage V_(BR)EBO
Collector-emitter cut-off current I_CEX
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
I_CBO
I_EBO
H_FE
Collector-emitter saturation
voltage
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
V_BE(on)
f_T
C_obo
t _(d)
t _(r)
t _(stg)
t _(f)
Min.
60
60
15
7.0
160
200
190
150
Typ. Max. Unit Conditions
85
V I_C=100␮A
85
23
8.3
-
<1
<1
300
350
330
280
7
22
70
130
0.83
0.89
0.81
235
56
15
38.5
213
19.7
100
20
10
560
15
30
90
180
0.93
0.98
0.91
V I_C =100␮A,
R_BE < 1k⍀ OR
-1V < V_BE < 0.25V
V _IC=10mA ^(*)
V
nA
nA
nA
mV
mV
mV
mV
V
V
V
MHz
I_E=100␮A
V_CE = 48V,
R_BE < 1k⍀ OR
-1V < V_BE < 0.25V
V_CB=48V
V_EB=6V
I_C=10mA, V_CE=2V^(*)
I_C=500mA, V_CE=2V^(*)
I_C=3A, V_CE=2V^(*)
I_C=6A, V_CE=2V^(*)
I_C=0.1A, I_B=5mA^(*)
I_C=1A, I_B=100mA^(*)
I_C=3A, I_B=60mA^(*)
I_C=6A, I_B=120mA^(*)
I_C=3A, I_B=60mA^(*)
I_C=6A, I_B=120mA^(*)
I_C=6A, V_CE=2V^(*)
Ic=500mA, V_CE=2V,
f=50MHz
pF V_CB=10V, f=1MHz
ns V_CC=5V, I_C=3A,
ns ^IB1^=IB2^=150mA
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮S. Duty cycle Յ2%.
Issue 1 - February 2006
4
© Zetex Semiconductors plc 2006
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