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| ZXTN2031F Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 50V, SOT23, NPN medium power transistor | |||
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ZXTN2031F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
V(BR)CBO
Collector-emitter breakdown V(BR)CEV
voltage
Collector-emitter breakdown V(BR)CEO
voltage
Emitter-base breakdown
voltage
V(BR)EBO
Collector-emitter cut-off
ICEV
current
Collector-base cut-off current ICBO
Emitter-base cut-off current IEBO
Static forward current
HFE
transfer ratio
Min.
80
80
50
7.0
190
200
200
80
Typ.
175
175
75
8.3
<1
<1
<1
300
350
340
125
Collector-emitter saturation VCE(sat)
13
voltage
30
80
135
Base-emitter saturation
voltage
VBE(sat)
0.80
0.92
Base-emitter turn-on voltage VBE(on)
0.83
Transition frequency
fT
125
Output capacitance
Cobo
29
Delay time
t(d)
16
Rise time
t(r)
27
Storage time
t(stg)
468
Fall time
t(f)
44
Max.
20
20
10
560
18
40
110
170
0.90
1.00
0.93
Unit Conditions
V IC=100µA
V IC =1µA, -1V< VBE<+0.3V
V IC=10mA (a)
V IE=100µA
nA VCE=60V, VBE = -1V
nA
nA
mV
mV
mV
mV
V
V
V
MHz
pF
ns
VCB=60V
VEB=6V
IC=10mA, VCE=2V(a)
IC=500mA, VCE=2V(a)
IC=2A, VCE=2V(a)
IC=5A, VCE=2V(a)
IC=0.1A, IB=5mA(a)
IC=1A, IB=100mA(a)
IC=2A, IB=40mA(a)
IC=5A, IB=250mA(a)
IC=2A, IB=40mA(a)
IC=5A, IB=250mA(a)
IC=5A, VCE=2V(a)
Ic=500mA, VCE=10V,
f=50MHz
VCB=10V, f=1MHz
ns VCC=12V, IC=2.5A,
ns IB1=IB2=125mA
ns
NOTES:
(a) Measured under pulsed conditions. Pulse width=300â®S. Duty cycle Õ
2%.
Issue 2 - January 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com
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