ZXTN2010Z Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZXTN2010Z
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
R Յ 1k⍀
I_EBO
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
H_FE
f_T
150 190
V I_C=100␮A
150 190
V I_C=1␮A, RBՅ1k⍀
60
80
V I_C=10mA*
7
8.1
V I_E=100␮A
20 nA V_CB=120V
0.5 ␮A V_CB=120V,T_amb=100ЊC
20 nA V_CB=120V
0.5 ␮A V_CB=120V,T_amb=100ЊC
10 nA V_EB=6V
17
30 mV I_C=100mA, I_B=5mA*
35
55 mV I_C=1A, I_B=100mA*
40
65 mV I_C=1A, I_B=50mA*
90 125 mV I_C=2A, I_B=50mA*
170 230 mV I_C=6A, I_B=300mA*
970 1100 mV I_C=6A, I_B=300mA*
910 1050 mV I_C=6A, V_CE=1V*
100 200
I_C=10mA, V_CE=1V*
100 200 300
I_C=2A, V_CE=1V*
55 105
I_C=5A, V_CE=1V*
20
40
I_C=10A, V_CE=1V*
130
I_C=100mA, V_CE=10V
f=50MHz
Output capacitance
Switching times
C_OBO
t_ON
t_OFF
31
pF V_CB=10V, f=1MHz*
42
ns I_C=1A, V_CC=10V,
760
I_B1=I_B2=100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2005