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| ZXTN2010A Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE | |||
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ZXTN2010A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
RÕ
1kâ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
fT
150 190
V IC=100â®A
150 190
V IC=1â®A, RBÕ
1kâ
60
80
V IC=10mA*
7
8.1
V IE=100â®A
20 nA VCB=120V
0.5 â®A VCB=120V, Tamb=100ÐC
20 nA VCB=120V
0.5 â®A VCB=120V, Tamb=100ÐC
10 nA VEB=6V
18
30 mV IC=100mA, IB=5mA*
40
55 mV IC=1A, IB=100mA*
45
65 mV IC=1A, IB=50mA*
95 130 mV IC=2A, IB=50mA*
170 210 mV IC=5A, IB=200mA*
950 1050 mV IC=4A, IB=200mA*
840 950 mV IC=4A, VCE=1V*
100 200
IC=10mA, VCE=1V*
100 200 300
IC=2A, VCE=1V*
55 105
IC=5A, VCE=1V*
20
40
IC=10A, VCE=1V*
130
MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
31
pF VCB=10V, f=1MHz*
42
ns IC=1A, VCC=10V,
760
ns IB1=IB2=100mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2005
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