ZXTN19100CFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 100V, SOT23F, NPN high gain power transistor

ZXTN19100CFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
Symbol Min.
BV_CBO 200
BV_CEX 200
BV_CEO 100
BV_EBO
7
BV_ECX
6
BV_ECO
5
I_CBO
Collector-emitter cut-off current I_CEX
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
200
ratio
130
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_obo
t_d
t_r
t_s
t_f
Typ.
240
240
120
8.3
8.3
8
<1
<1
<1
45
105
170
950
880
350
250
25
150
305
15.7
28.3
23.6
962
133
Max.
50
20
100
50
60
135
235
1050
1000
500
25
Unit Conditions
V I_C = 100␮A
V I_C = 100␮A, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
nA V_CB = 160V
␮A V_CB = 160V, T_amb= 100°C
nA V_CE = 160V, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 20mA}^(*)
mV _{IC = 4.5A, IB = 450mA}^(*)
mV _{IC = 4.5A, IB = 450mA}^(*)
mV _{IC = 4.5A, VCE = 2V} ^(*)
I_C = 0.1A, V_CE = 2V ^(*)
I_C = 1A, V_CE = 2V ^(*)
I_C = 5A, V_CE = 2V ^(*)
MHz I_C = 100mA, V_CE = 10V
f =50MHz
pF _{VEB = 0.5V, f = 1MHz} ^(*)
pF _{VCB = 10V, f = 1MHz} ^(*)
ns V_CC = 10V.
ns ^{IC = 500mA,}
ns ^{IB1 = IB2= 50mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com