ZXTN19020DG Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V NPN high gain transistor

ZXTN19020DG
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Symbol
BV_CBO
BV_CEX
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_CEO
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
BV_ECO
BV_EBO
I_CBO
Collector-Emitter cut-off I_CEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Min.
70
70
20
6
4.5
7
Base-Emitter saturation
voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
300
transfer ratio
260
130
50
Transition frequency
f_T
Typ.
100
100
30
8.4
5.7
8.4
<1
<1
27
50
80
63
85
200
1040
910
450
390
175
75
30
160
Max.
50
0.5
100
50
35
70
100
80
110
250
1150
1050
900
Unit Conditions
V I_C = 100␮A
V I_C = 100␮A, R_BE < 1kΩ
or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A, R_BC < 1kΩ
or
0.25V > V_BC > -0.25V
V I_E = 100␮A
V I_E = 100␮A
nA V_CB = 70V
␮A _{VCB = 70V, Tamb= 100°C}
nA V_CE = 70V, R_BE < 1kΩ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 10mA}^(*)
mV I_C = 2A, I_B = 20mA^(*)
mV I_C = 2A, I_B = 40mA^(*)
mV I_C = 4A, I_B = 400mA^(*)
mV I_C = 9A, I_B = 450mA^(*)
mV _{IC = 9A, IB = 450mA}^(*)
mV _{IC = 9A, VCE = 2V}^(*)
MHz
I_C = 100mA, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
I_C = 9A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
I_C = 20A, V_CE = 2V^(*)
I_C = 50mA, V_CE = 10V
f = 100MHz
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
297 400
32.6 40
129
96
398
90
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns
ns ^IC ^{= 1A, V}CC ^{= 10V,}
ns ^IB1 ^{=- I}B2 ^{= 10mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - January 2008
4
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