ZXTN19020DFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V, SOT23F, NPN high gain power transistor

ZXTN19020DFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown voltage BV_CBO
Collector-emitter breakdown
voltage (forward blocking)
BV_CEX
Min.
70
70
Collector-emitter breakdown
voltage (base open)
BV_CEO 20
Emitter-base breakdown voltage BV_EBO
7
Emitter-collector breakdown
BV_ECX
6
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
BV_ECO 4.5
I_CBO
Collector-emitter cut-off current I_CEX
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage
V_BE(on)
Static forward current transfer h_FE
300
ratio
260
160
50
Transition frequency
f_T
Typ.
100
100
30
8.4
8.4
5.7
<1
-
<1
25
45
70
55
140
940
830
450
420
270
80
160
Max.
50
20
100
50
30
65
95
75
190
1050
950
900
Unit Conditions
V I_C = 100␮A
V I_C = 100␮A, R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A
V I_E = 100␮A, R_BC Յ 1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
nA V_CB = 56V
␮A _{VCB = 56V, Tamb= 100°C}
nA V_CE = 56V, R_BE Յ 1k⍀ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 10mA}^(*)
mV _{IC = 2A, IB = 20mA}^(*)
mV _{IC = 2A, IB = 40mA}^(*)
mV _{IC = 6.5A, IB = 180mA}^(*)
mV _{IC = 6.5A, IB = 180mA}^(*)
mV _{IC = 6.5A, VCE = 2V}^(*)
I_C = 0.1A, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
I_C = 6.5A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
MHz I_C = 50mA, V_CE = 10V
f = 50MHz
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
297
32.6 40
129
96
398
90
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^IC ^{= 1A,}
ns ^{IB1 = IB2= 10mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - February 2007
4
© Zetex Semiconductors plc 2007
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