ZXTN19020CFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V, SOT23F, NPN high gain power transistor

ZXTN19020CFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BV_CBO 65 85
V I_C = 100␮A
Collector-emitter breakdown BV_CEX 65 85
voltage (forward blocking)
V I_C = 100␮A, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
Collector-emitter breakdown BV_CEO 20 25
voltage (base open)
V _{IC = 10mA} ^(*)
Emitter-base breakdown voltage BV_EBO
7 8.3
V I_E = 100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BV_ECX
6 8.2
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
Emitter-collector breakdown
voltage (base open)
BV_ECO
4.5 5.3
V I_E = 100␮A,
Collector-base cut-off current I_CBO
<1 50 nA V_CB = 50V
20 ␮A _{VCB = 50V, Tamb= 100°C}
Collector-base cut-off current I_CEX
<1 100 nA V_CE = 50V, R_BE < 1k⍀ or
-1V < V_BE < 0.25V
Emitter-base cut-off current
I_EBO
<1 50 nA V_EB = 5.6V
Collector-emitter saturation
voltage
V_CE(sat)
23 30 mV _{IC = 1A, IB = 100mA}^(*)
45 65 mV _{IC = 1A, IB = 10mA}^(*)
55 70 mV _{IC = 2A, IB = 40mA}^(*)
135 175 mV _{IC = 7A, IB = 280mA}^(*)
Base-emitter saturation voltage V_BE(sat)
960 1050 mV _{IC = 7A, IB = 280mA}^(*)
Base-emitter turn-on voltage V_BE(on)
840 950 mV _{IC = 7A, VCE = 2V}^(*)
Static forward current transfer h_FE
ratio
200 350 500
180 340
I_C = 0.1A, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
100 220
I_C = 7A, V_CE = 2V^(*)
45 95
I_C = 15A, V_CE = 2V^(*)
Transition frequency
f_T
150
MHz I_C = 50mA, V_CE = 10V
f =50MHz
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
315
40 50
135
117
285
88
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC =10 V.
ns ^{IC =1A,}
ns ^{IB1 = IB2=10mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - February 2007
4
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