ZXTN07045EFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 45V, SOT23F, NPN high gain power transistor

ZXTN07045EFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECX
Emitter-collector breakdown BV_ECO
voltage (base open)
Collector-base cut-off current I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Min.
45
45
7
6
6
Typ. Max. Unit Conditions
160
V I_C = 100␮A
60
V _{IC = 10mA} ^(*)
8.3
V I_E = 100␮A
8.2
V I_E = 100␮A, R_BC < 1k⍀ or
0.25V > V_BC > -0.25V
7.2
V I_E = 100␮A,
<1
50
nA V_CB = 35V
20
␮A _{VCB = 35V, Tamb= 100°C}
<1
50
nA V_EB = 5.6V
40
65 mV _{IC = 0.1A, IB = 0.5mA}^(*)
140 190 mV _{IC = 1A, IB = 5mA}^(*)
60
80 mV _{IC = 1A, IB = 100mA}^(*)
180 220 mV _{IC = 2A, IB = 20mA}^(*)
270 340 mV _{IC = 4A, IB = 80mA}^(*)
950 1050 mV _{IC = 4A, IB = 80mA}^(*)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
f_T
875 1000 mV _{IC = 4A, VCE = 2V}^(*)
500 800 1500
I_C = 0.1A, V_CE = 2V^(*)
400 710
I_C = 1A, V_CE = 2V^(*)
250 530
I_C = 2A, V_CE = 2V^(*)
70 125
I_C = 4A, V_CE = 2V^(*)
150 190
MHz I_C = 50mA, V_CE = 5V
f = 50MHz
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
225
18.4 25
22.3
10.6
613
146
pF _{VEB = 0.5V, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V.
ns ^IC ^{= 500mA,}
ns ^{IB1 = IB2= 50mA.}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 2 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com