ZXTN04120HFF Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 120V, SOT23F, NPN medium power Darlington transistor

ZXTN04120HFF
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BV_CBO
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-base breakdown
voltage
BV_EBO
Collector-base cut-off current I_CBO
Collector-emitter cut-off
current
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_CES
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
transfer ratio
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_obo
t_d
t_r
t_s
t_f
Min.
140
120
10
3K
3K
3K
1K
Typ.
300
140
16
<1
<0.1
<1
0.8
1.1
1.1
1.55
1.45
11k
12k
10k
5k
120
68
12.8
507
136
910
369
Max. Unit Conditions
V I_C = 100␮A
V _{IC = 10mA} ^(*)
V I_E = 100␮A
100 nA V_CB = 120V
10 ␮A V_CB = 120V, T_amb= 100°C
10 ␮A V_CE = 120V
100
0.9
1.5
1.5
1.70
nA V_EB = 8V
V _{IC = 250mA, IB = 0.25mA}^(*)
V _{IC = 1A, IB = 1mA}^(*)
V _{IC = 2A, IB = 5mA}^(*)
V _{IC = 1A, IB = 1mA}^(*)
1.70
30K
90
25
V _{IC = 1A, VCE = 5V}^(*)
I_C = 50mA, V_CE = 5V^(*)
I_C = 500mA, V_CE = 5V^(*)
I_C = 1A, V_CE = 5V^(*)
I_C = 2A, V_CE = 5V^(*)
MHz I_C = 100mA, V_CE = 10V
f = 20MHz
pF _{VEB = 500mV, f = 1MHz}^(*)
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V
ns ^{IC = 500mA,}
ns ^{IB1 = IB2= 0.5mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - May 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com