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| ZXTEM322_06 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – MPPS Miniature Package Power Solutions 80V NPN LOW SATURATION TRANSISTOR | |||
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ZXTEM322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
100 180
V IC=100â®A
80 110
V IC=10mA*
7.5 8.2
V IE=100â®A
25
nA VCB=80V
25
nA VEB=6V
25
nA VCE=65V
15
20 mV IC=0.1A, IB=10mA*
45
60 mV IC=0.5A, IB=50mA*
145 185 mV IC=1A, IB=20mA*
160 200 mV IC=1.5A, IB=50mA*
240 325 mV IC=3.5A, IB=300mA*
1.09 1.175 V IC=3.5A, IB=300mA*
0.96 1.05 V IC=3.5A, VCE=2V*
200 450
300 450 900
110 170
60
90
20
30
10
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=1.5A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
100 160
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
11.5 18
86
1128
pF VCB=10A, f=1MHz
ns VCC=10V, IC=1A
ns IB1=IB2=25mA
*Measured under pulsed conditions. Pulse width=300â®s. Duty cycle Õ
2%
SEMICONDUCTORS
4
ISSUE 2 - JUNE 2006
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