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| ZXTDBM832 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – MPPS-TM Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXTDBM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
40
100
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
20
27
V
IC=10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
7.5
8.2
V
IE=100â®A
25 nA
VCB=32V
25 nA
VEB=6V
25 nA
VCES=16V
8
15 mV
IC=0.1A, IB=10mA*
90
150 mV
IC=1A, IB=10mA*
115 135 mV
IC=2A, IB=50mA*
190 250 mV
IC=3A, IB=100mA*
210 270 mV
IC=4.5A, IB=125mA*
0.98 1.05 V
IC=4.5A, IB=125mA*
0.88 0.95 V
IC=4.5A, VCE=2V*
200 400
300 450
200 360
100 180
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
100 140
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
23
30 pF
170
ns
400
ns
VCB=10V, f=1MHz
VCC=10V, IC=3A
IB1=IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 1 - JUNE 2002
4
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