 English |
|
|
|
|
|
|
|
| ZXTDAM832 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – MPPS Miniature Package Power Solutions DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR | |||
| |||
| ◁ |
ZXTDAM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
40
70
V
IC=100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
15
18
V
IC=10mA*
7.5 8.2
V
IE=100â®A
25 nA
VCB=32V
25 nA
VEB=6V
25 nA
VCES=12V
8
14 mV
70 100 mV
165 200 mV
240 280 mV
200
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=4.5A, IB=50mA*
IC=4.5A, IB=100mA*
0.94 1.00 V
IC=4.5A, IB=50mA*
0.88 0.95 V
IC=4.5A, VCE=2V*
200 415
300 450
200 320
150 240
80
IC=10mA, VCE=2V*
IC=0.2A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
80 120
MHz
IC=50mA, VCE=10V
f=100MHz
30
40 pF
120
ns
160
ns
VCB=10V, f=1MHz
VCC=10V, IC=1A
IB1=IB2=10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 1 - JUNE 2002
4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese