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| ZXTD2M832 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – MPPS Miniature Package Power Solutions DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXTD2M832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-25 -35
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-20 -25
V
IC=-10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-7.5 8.5
V
-25 nA
-25 nA
-25 nA
-19 -30 mV
-170 -220 mV
-190 -250 mV
-240 -350 mV
-225 -300 mV
-1.10 -1.075 V
-0.87 -0.95 V
300 475
300 450
150 230
15
30
150 180
MHz
IE=-100â®A
VCB=-20V
VEB=-6V
VCES=-16V
IC=-0.1A, IB=-10mA*
IC=-1A, IB=-20mA*
IC=-1.5A, IB=-50mA*
IC=-2.5A, IB=-150mA*
IC=-3.5A, IB=-350mA*
IC=-3.5A, IB=350mA*
IC=-3.5A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-0.1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
21
30 pF
40
ns
670
ns
VCB=10V, f=1MHz
VCC=-10V, IC=1A
IB1=IB2=20mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
ISSUE 1 - JUNE 2002
4
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